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利用金属有机化合物化学气相淀积(MOCVD)在SiC衬底上外延生长了N-polar GaN材料,采用传输线模型(TLM)分析了Ti/Al/Ni/Au金属体系在N-polar GaN上的欧姆接触特性。结果表明,Ti/Al/Ni/Au(20/60/10/50nm)在N-polar GaN上可形成比接触电阻率为2.2×10~(-3)Ω·cm~2的非合金欧姆接触,当退火温度升至200℃,比接触电阻率降为1.44×10~(-3)Ω·cm~2,随着退火温度的进一步上升,Ga原子外逸导致欧姆接触退化为肖特基接触。
The N-polar GaN material was epitaxially grown on the SiC substrate by metal organic chemical vapor deposition (MOCVD). The transmission line model (TLM) was used to analyze the ohmic value of the Ti / Al / Ni / Au metal system on N-polar GaN Contact characteristics. The results show that Ti / Al / Ni / Au (20/60/10 / 50nm) can form non-alloy ohmic contact with a resistivity of 2.2 × 10 -3 Ω · cm ~ 2 on N-polar GaN When the annealing temperature was increased to 200 ℃, the specific resistivity decreased to 1.44 × 10 -3 Ω · cm -2. As the annealing temperature increased further, the Ga atom evolved to degrade the ohmic contact to Schottky contact .