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本文所提供的资料是关于如何解决在一个大气压的氩气氛下浮区生长80毫米直径单晶的问题。成功地生长直径80毫米硅单晶很大程度取决于经矿处理(整形)的多晶棒料的直径、籽晶晶向、熔区长度、转速、移动速度,拉完单晶长度以及晶体支承机构等因素。调节好这些参数可获得最佳的生长条件。早期在控制74毫米或更大直径晶体时曾碰到下面的问题:需提供更大的功率以便熔化直径较大的硅棒,为了提高有效功率必须进一步改变线圈的几何形状;以及用生长小直径用的拉速在熔硅时可能会发生凝固或溢出。
This article provides information on how to solve the problem of growing a single crystal 80 mm in diameter under an atmospheric argon atmosphere. The successful growth of 80mm diameter silicon single crystals depends greatly on the diameter of the treated (shaped) polycrystalline bar, the orientation of the seed, the length of the molten zone, the speed of rotation, the speed of movement, the length of the finished single crystal and the crystal support Institutions and other factors. Adjust these parameters for optimal growth conditions. Earlier problems with controlling 74 mm or larger diameter crystals have encountered the following problems: Greater power is required to melt the larger diameter silicon rods, the coil geometry must be further modified in order to increase effective power, The pulling speed used in the silicon melt may occur when the solidification or overflow.