论文部分内容阅读
使用装有超微显微硬度测试仪的扫描电子显微镜，对不同取向的ＨｇＣｄＴｅ晶片施加负荷，负荷压力从２克～０．０５克。由于晶体具有各向异性，在相同压力下，不同取向的ＨｇＣｄＴｅ晶片中引起的损伤有明显差异，实验得到损伤区域的大小与晶面的关系是｛１１１｝＞｛１２１｝＞｛３５１｝。同时讨论了损伤层的结构。
Using a scanning electron microscope equipped with an ultra-micro-hardness tester, HgCdTe wafers with different orientations were loaded with loads ranging from 2 grams to 0.05 grams. Due to the anisotropy of crystal, the damage induced in HgCdTe wafers with different orientations under the same pressure is obviously different. The relationship between the size of damaged region and the crystal plane is {111}> {121}> {351}. The structure of the damaged layer is also discussed.