日本富士通研究所首次在1.3μm波段实现量子点半导体激光器室温连续振荡.采用分子束外延(MBE),点的大小以相当于在1.25μm波段的生长速度自身形成量子点,并在这个生长速度下提高量子点的密度.在此基础上,把InAs量子点用In-GaAs覆盖,减缓量子点产生畸变,使其达到与1.3μm波段相对应尺寸,重复3次生长获 For the first time, Fujitsu Laboratories Inc. (Japan) Co., Ltd. achieved continuous ambient temperature oscillation of a quantum dot semiconductor laser at a wavelength of 1.3μm using molecular beam epitaxy (MBE). The size of the dots forms quantum dots at a growth rate equivalent to 1.25μm. At this growth rate To increase the density of quantum dots.On this basis, the InAs quantum dots are covered with In-GaAs to reduce the distortion generated in the quantum dots to reach the size corresponding to the 1.3 μm band and repeat the growth for 3 times