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测量与分析表明,锑化铟晶片的表面状况与化学腐蚀密切相关,起因于腐蚀液对表面的择优腐蚀及氧化。讨论了制备高性能器件的合理腐蚀步骤。
Measurement and analysis show that the surface condition of indium antimonide is closely related to chemical corrosion, which is caused by the corrosion and oxidation of the surface of the antimony indium wafer. The reasonable etching steps for preparing high performance devices are discussed.