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Cz-grown <100>-oriented,n-type single crystal silicon wafers,with a resistivity in the range of 0.69~0.8 Ωcm,were implanted with 15 keV He ions to a dose of 2×1016/cm2.The sample holder was kept at room temperature during He implantation. The wafers were tilted by 7° from the wafer normal to minimize channeling effects. Post implantation,samples were isothermal annealing at 673 K with time ranging from 5 to 120 min. The surface morphology was analyzed by atomic force microscopy(AFM). As shown
Cz-grown <100> -oriented, n-type single crystal silicon wafers, with a resistivity in the range of 0.69-0.8 Ωcm, were implanted with 15 keV He ions to a dose of 2 × 10 16 / kept at room temperature during He implantation. The wafers were tilted by 7 ° from the wafer normal to minimize channeling effects. Post implantation, samples were isothermal annealing at 673 K with time ranging from 5 to 120 min. force microscopy (AFM). As shown