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本文采用ＭＯＣＶＤ技术，以Ｙ（ＴＭＨＤ）３，Ｂａ（ＴＭＨＤ）２和Ｃｕ（ＴＭＨＤ）２为挥发源，高纯Ａｒ和Ｏ２分别为载流气体和反应剂，金属Ａｇ带为基体，在沉积温度为８５０℃，沉积过程中系统总压低于１．３３ｋＰａ的条件下，研究了４种情况的ＹＢＣＯ生长特点；４种沉积方式所制样品成分的均匀性、沿ｃ－轴取向情况以及表面形貌均存在较大的差别。４种沉积方式所制样品获得的最高Ｊｃ（７８Ｋ，０Ｔ）值分别为１．０４×１０￣４，２．２×１０￣４，１．７×１０￣４和１．４×１０￣４Ａ／ｃｍ￣２。本文还对产生上述结果的原因进行了分析，对有关的工艺问题进行了讨论。
In this paper, using MOCVD technology, Y (TMHD) 3, Ba (TMHD) 2 and Cu (TMHD) 2 as the source of volatility, high purity Ar and O2 as carrier gas and reactant respectively, And the total system pressure is less than 1.33 kPa during the deposition process, the growth characteristics of YBCO in four different conditions were studied. The uniformity, c-axis orientation and surface morphology There are big differences. The highest Jc (78K, 0T) values obtained from the four deposition methods were 1.04 × 10 ~ 4, 2.2 × 10 ~ 4, 1.7 × 10 ~ 4 and 1.4 × 10 ~ 4A / Cm ~ 2. The paper also analyzes the causes of the above-mentioned results and discusses the related technological problems.