Novel LDNMOS embedded SCR with strong ESD robustness based on 0.5 μm 18 V CDMOS technology

来源 :Journal of Central South University | 被引量 : 0次 | 上传用户:zippomu
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A novel LDNMOS embedded silicon controlled rectifier(SCR) was proposed to enhance ESD robustness of high-voltage(HV) LDNMOS based on a 0.5 μm 18 V CDMOS process. A two-dimensional(2D) device simulation and a transmission line pulse(TLP) testing were used
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