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用粉末 -溶胶 0 - 3型厚膜技术制备出厚度为 10μm的 PL ZT厚膜。PL ZT超细陶瓷粉采用 sol- gel法制备 ,这样保证了其化学组分的准确 ,降低了合成温度。在 Pt底电极上 ,掺 L a PZT (PL ZT- 8/5 3/4 7)厚膜的择优取向为 [111]与 Pt的取向一致 ,而纯 PZT(PL ZT- 0 /5 3/4 7)厚膜的择优取向为 [10 0 ]。在同等工艺条件下 ,掺 L a PZT厚膜晶粒大于纯 PZT厚膜的晶粒。厚膜介电、铁电性能分别使用 HP4192 A低频阻抗分析仪和 ZT- 铁电材料参数测试仪进行测试 ,结果表明掺 L a PZT厚膜的频率特性较好 ,矫顽电场强度 Ec有显著降低。
PL ZT thick films with a thickness of 10μm were prepared by powder-sol-0-3 thick film technology. PL ZT ultrafine ceramic powder prepared by sol-gel method, thus ensuring the accuracy of its chemical composition, reducing the synthesis temperature. The preferred orientation of the thick film of LaPZT (PL ZT-8/5 3/4 7) on the Pt bottom electrode is [111] consistent with the orientation of Pt whereas the pure PZT (PL ZT-0/5 3/4 7) The preferred orientation of the thick film is [10 0]. Under the same conditions, the grains of L a PZT thick film are larger than the pure PZT thick film. The dielectric and ferroelectric properties of thick film were tested by HP4192 A low frequency impedance analyzer and ZT-ferroelectric material parameter tester, respectively. The results show that the frequency characteristics of the doped LaPZT thick film are better and the coercive electric field strength Ec is significantly lower .