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研究了采用MOCVD技术分别在100与500Torr反应室压力下生长的非故意掺杂GaN薄膜的光学与电学性能。研究表明,低压100Torr外延生长条件可以有效地降低Ga与NH3气相反应造成GaN薄膜的碳杂质沾污,从而抑制造成光致发光中黄光峰与蓝光峰的深受主的形成,所制备的材料表现出较好的光学性能。同时,不同生长压力下的GaN薄膜表现出相异的电学性能,即在500Torr下生长的样品通常表现出更高的载流子浓度((4.6～6.4)×1016 cm-3)与更高的迁移率(446～561cm2/(V.s)),而100Torr下生长的样品通常表现为更低的载流子浓度(1.56～3.99)×1016 cm-3与更低迁移率(22.9～202cm2/(V.s))。
The optical and electrical properties of unintentionally doped GaN films grown by MOCVD at pressures of 100 and 500 Torr, respectively, were studied. The results show that the low-voltage epitaxial growth conditions of 100Torr can effectively reduce the Ga-NH3 gas-phase reaction caused by carbon impurities in GaN film contamination, thereby inhibiting the photoluminescence caused by the yellow peak and blue peak deep by the Lord formed, the material prepared Better optical performance. Meanwhile, GaN films grown under different growth pressures show different electrical properties. That is, samples grown at 500 Torr usually show higher carrier concentration (4.6-6.4 × 1016 cm -3) and higher (446 ~ 561cm2 / (Vs)), while those grown under 100Torr usually showed lower carrier concentration (1.56 ~ 3.99) × 1016 cm-3 and lower mobility (22.9 ~ 202cm2 / )).