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在等离子体增强化学气相淀积 (PECVD)系统中 ,采用a Si∶H层淀积与原位等离子体氧化相结合的逐层生长的方法成功制备出a Si∶H SiO2 多层膜 (ML) ;利用限制性结晶原理通过两步退火处理使a Si∶H层晶化获得尺寸可控的nc Si SiO2 ML ,并观察到室温下的蓝光发射 ;结合Raman散射和剖面透射电子显微镜技术分析了nc Si SiO2 ML的结构特性 ;通过对晶化样品光致发光谱和紫外 可见光吸收谱的研究 ,探讨了蓝光发射的起源
In the plasma enhanced chemical vapor deposition (PECVD) system, a Si: H SiO2 multilayered film (ML) was successfully prepared by layer-by-layer growth of a Si: H layer deposition combined with in situ plasma oxidation. ; The size of the controlled nc Si SiO2 ML was obtained by crystallization of a Si:H by a two-step annealing process using the principle of limiting crystallization and the blue emission at room temperature was observed; and the combination of Raman scattering and cross-section transmission electron microscopy Si SiO2 ML structure characteristics; through the crystallization of the sample photoluminescence spectra and UV-visible absorption spectra of the study discussed the origin of blue light emission