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以工业V2 O5为原料 ,采用N2 热分解法在普通玻璃和石英玻璃衬底上制备VO2 薄膜 ,在自制的电阻 -温度测量装置上测量VO2 薄膜的电阻随温度的变化。结果表明 :VO2 薄膜具有明显电阻突变特性 ,其相变达到了 1.5～ 2 .0个数量级 ,相变温度约为 35℃ ;VO2 薄膜的主要成分是二氧化钒 ,同时含有少量其它的钒化合物。
V2O films were prepared from industrial V2 O5 using N2 thermal decomposition method on ordinary glass and quartz glass substrates. The resistance of VO2 thin film was measured with a self-made resistance-temperature measurement device. The results show that the VO2 thin film has the characteristic of sudden change of resistance, the phase change reaches 1.5-2.0 order of magnitude, and the phase transition temperature is about 35 ℃. The main component of VO2 thin film is vanadium dioxide with a few other vanadium compounds.