早在1952年资料[1]就开始发表Ⅲ-Ⅴ族半导体InSb的研究报告,特别是单晶InSb在中红外区域里灵敏度高,大大提高了这种材料的应用价值。以后虽然发表了许多研究报告,但作为红外探测器的资料还是不多的。InSb属于窄带半导体,在 300°K时带宽为0.17电于伏,77°K时带宽为0.23电子伏。红外吸收端是7微米(300°K)和 As early as 1952, [1] began to publish the research reports on Group III-V semiconductors InSb. In particular, the single-crystal InSb has high sensitivity in the mid-infrared region and greatly enhances the application value of this material. Although many research reports have been published since then, there is still not much information available as an infrared detector. InSb is a narrow band semiconductor with a bandwidth of 0.17 at 300 ° K and an electrical bandwidth of 0.23 at 77 ° K. Infrared absorption end is 7 microns (300 ° K) and