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用高能质子激发单元素靶或化合物靶产生的特征X射线源,系统地测量了1.486—15.165千电子伏能区里硅烷和8.041—29.109千电子伏能区里硅元素的质量衰减系数.不仅在实验上验证了布喇格相加规则在气体化合物中的适用性,而且得到了1.4一6千电子伏能区里硅元素的质量衰减截面,从而填补了硅元素在该能区的数据空白.从实验测得的总截面中减去康普顿散射和漫散射截面,便得到硅元素的光电截面值,并与理论值进行了比较.
The mass attenuation coefficient of silicon in 1.486-15.165 keV and silicon in 8.041-29.109 keV was systematically measured by the characteristic X-ray source generated by high-energy proton excitation of single-element target or compound target. The applicability of the Bragg addition rule to gas compounds was experimentally verified, and the mass attenuation cross section of silicon element in 1.4-6000 eV was obtained, which filled the blank of silicon in the energy region. The Compton scattering and diffuse scattering cross section were subtracted from the experimental total cross section to obtain the photoelectric cross section value of the silicon element, which was compared with the theoretical value.