【摘 要】
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High purity SiO2 single crystals with polished surfaces were irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions. The ion irradiated experiments were perfo
【出 处】
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IMP & HIRFL Annual Report
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High purity SiO2 single crystals with polished surfaces were irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions. The ion irradiated experiments were performed at the 320 kV high voltage platform (IMP, Lanzhou) and the HIRFL-SFC facility in Lanzhou. In Fig.1, PL spectra of silicon dioxide irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions were showed. PL peaks located at 445 nm (F2 color center) were increased in Fig.1(a) samples irradiated with 600 keV Ar ions, the intensity of emission band achieves a maximum value when irradiation dose is up to
High purity SiO2 single crystals with polished surfaces were irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions. The ion irradiation experiments were performed at the 320 kV high voltage platform (IMP, Lanzhou) and the HIRFL-SFC facility in PL spectra of silicon dioxide irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions were showed. PL peaks located at 445 nm (F2 color center) were increased in Fig. 1 (a) samples irradiated with 600 keV Ar ions, the intensity of emission band achieves a maximum value when irradiation dose is up to
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