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优质的外延Pb_xSn_(1-x)Te膜最初是在锗基片上制得的。用射频多阴极系统同时或逐个以不同速率从三个靶进行溅射成膜。当基片低于普通蒸发技术所需温度时在NaCl和BaF_2基片上可获得Pb_xSn_(1-x)Te多晶膜。采用共溅射技术,控制金属或碲的过量可获得n型和p型Pb_xSn_(1-x)Te膜,其电性能接近最佳的单晶值。把Pb_xSn_(1-x)Te膜淀积在硅和锗基片上做成中红外探测器列阵,可以很容易与全集成热成象系统电子读出元件相结合。峰值D~＊用光导外延膜可达2.4×10~8厘米·赫~(1/2)瓦。多晶膜淀积在复盖有SiO_2膜的Ge片或Si片上显示出很高的响应率(480伏/瓦),D_λ~＊(8.5微米,800,1)在77°K和2π球面度视场角时大于10~9厘米·赫~(1/2)瓦。报导了线列阵探测器的噪音、响应率及探测度的测试。
High-quality epitaxial Pb_xSn_ (1-x) Te films were originally fabricated on germanium substrates. The RF multi-cathode system was sputter deposited from three targets simultaneously or one after another at different rates. Pb_xSn_ (1-x) Te polycrystalline films were obtained on NaCl and BaF_2 substrates when the substrate temperature was lower than that of the conventional evaporation technique. Co-sputtering technology, control of metal or tellurium excess can be obtained n-type and p-type Pb_xSn_ (1-x) Te film, its electrical properties close to the best single crystal value. The deposition of the Pb_xSn_ (1-x) Te film on silicon and germanium substrates as a mid-infrared detector array allows easy integration with fully integrated thermal imaging system electronic readout elements. Peak D ~ * with light guide epitaxial film up to 2.4 × 10 ~ 8 cm · He ~ (1/2) watts. Polycrystalline films deposited on Ge or Si films covered with SiO 2 films showed high responsivity (480 V / W), D_λ ~ * (8.5 μm, 800,1) at 77 ° K and 2π sphericity Viewing angle greater than 10 ~ 9 cm · He ~ (1/2) watts. Reported on the linear array detector noise, response rate and detection of the test.