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针对悬浮区熔法生长较大直径的单晶硅时,单晶硅外部的轴向温度梯度比内部温度梯度大很多,从而导致硅单晶径向电阻率不均匀及生长裂纹的问题。通过有限元法对生长区熔硅单晶的温度场进行了数值模拟,建立了有反射环和无反射环的两种模型,得到了两种模型下的单晶温度分布图,并对比分析了两种模型下的单晶外表面温度分布及纵向温度梯度分布。研究结果表明,反射环可改善温度场分布,降低单晶硅外表面轴向温度梯度,使晶体径向温度趋于一致,提高硅单晶径向电阻率均匀性,并有效解决了生长过程中单晶硅易出现裂纹的问题。
In the case of monocrystalline silicon with larger diameter grown by melt growth in suspension zone, the axial temperature gradient outside the single crystal silicon is much larger than the internal temperature gradient, which leads to the problem of uneven radial resistivity of silicon single crystal and growth cracks. By means of finite element method, the temperature field of the silicon single crystal grown in the growth zone was numerically simulated. Two models with reflection ring and non-reflection ring were established. The temperature distribution of the single crystal under the two models was obtained. TEMPERATURE DISTRIBUTION AND LONGITUDINAL TEMPERATURE DEPENDENCE OF SINGLE CRYSTAL SURFACE UNDER TWO MODELS. The results show that the reflection ring can improve the distribution of temperature field, reduce the axial temperature gradient on the outer surface of single crystal silicon, make the radial temperature of the crystal become uniform, improve the uniformity of radial resistivity of single crystal silicon, and effectively solve the problem of the growth process Monocrystalline silicon prone to cracking problems.