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采用射频磁控溅射法,以NiO靶材为溅射靶材,在不同温度玻璃衬底上制备了NiO薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、分光光度计以及四探针测试系统研究了温度对薄膜结构、光学和电学性能的影响。结果分析表明所有NiO薄膜都具有(111)方向的择优取向,并且晶格常数随温度升高而减小。NiO薄膜的晶粒尺寸和粗糙度也随着温度的升高而增大。由于NiO薄膜中镍空位和间隙氧的减少,薄膜的透过率、禁带宽度以及电阻率都随温度的升高而增大。
The RF magnetron sputtering method was used to prepare the NiO thin film on the glass substrate with NiO target as the sputtering target. The effects of temperature on the structure, optical and electrical properties of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectrophotometer and four probe test system. The results show that all NiO films have a preferred orientation in the (111) orientation and the lattice constant decreases with increasing temperature. NiO film grain size and roughness also increases with increasing temperature. Due to the reduction of nickel vacancy and interstitial oxygen in the NiO film, the transmittance, band gap and resistivity of the film both increase with the increase of temperature.