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以钛酸四丁酯和乙酸钡为主要原料，以乙二醇独甲醚为溶剂，采用溶胶凝胶法在(100)低阻硅片上制备了BaTiO-3薄膜电容，用XRD分析了该薄膜的结构，发现薄膜在硅片上取向生长，同时又对薄膜的介电性质进行研究，结果表明，薄膜的介电特性在高频范围内随频率的变化比较稳定并讨论了晶化温度对薄膜电容的影响
BaTiO-3 thin film capacitors were prepared on (100) low resistivity silicon by sol-gel method using tetrabutyl titanate and barium acetate as the main raw materials and ethylene glycol monomethyl ether as solvent. The results show that the dielectric properties of the films are stable with the change of frequency in the high frequency range and the crystallization temperature Effect on the film capacitance