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采用磁控溅射离子镀制备Cr-N薄膜,研究基体偏压对Cr-N薄膜组织结构和性能的影响。分别用辉光放电光电子谱(GDOES)、场发射扫描电镜(FESEM)和X射线衍射(XRD)分析薄膜成分和组织结构,显微硬度计测量薄膜硬度。结果表明,薄膜为非化学计量比的Cr-N薄膜,N/Cr原子比均小于0.25,薄膜主要以Cr的衍射峰为主。在偏压达到60 V后薄膜显示了较高的硬度(>25 GPa),其归因于离子轰击导致的薄膜的致密度的提高。偏压超过60 V后,致密度达到饱和,硬度增加不明显。
Cr-N thin films were prepared by magnetron sputter ion plating and the effect of substrate bias on the microstructure and properties of Cr-N thin films was investigated. The composition and microstructure of the films were analyzed by glow discharge photoelectron spectroscopy (GDOES), field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The hardness of the films was measured by microhardness tester. The results show that the films are non-stoichiometric Cr-N films with N / Cr atomic ratios less than 0.25. The diffraction peaks of Cr are dominant in the films. The film showed higher hardness (> 25 GPa) after the bias voltage reached 60 V due to the increase in the density of the film due to ion bombardment. Bias pressure exceeds 60 V, the density reached saturation, the hardness increase is not obvious.