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采用脉冲抽运方式可显著改善光抽运垂直外腔面发射半导体激光器的热效应,大幅度提升激光器的输出功率。用有限元方法数值求解瞬态传热方程,得到激光器中温度升高的最大值随抽运脉冲的变化规律。讨论了抽运光脉冲宽度范围的选择,分析了抽运脉冲重复频率对激光器中温度升高最大值的影响作用,对抽运脉冲的时间宽度进行了优化设计。结果表明,对于基质去除型的InGaAs量子阱垂直外腔面发射激光器,抽运光脉冲的宽度介于1～10μs时,激光器中最大温升值即明显下降;同时,抽运脉冲的重复频率应限制在50kHz以内,以满足脉冲间隔大于激光器热弛豫时间的要求,否则激光器中会产生热量的积聚,增加最大温升值。
The pulse pumping mode can significantly improve the thermal effect of the optical pumping vertical external cavity surface emitting semiconductor laser and greatly improve the output power of the laser. The transient heat transfer equation was numerically solved by the finite element method, and the maximum temperature rise with the change of pumping pulse was obtained. The selection of pulse width range of pump light is discussed. The influence of pump pulse repetition frequency on the maximum temperature rise in laser is analyzed. The time width of pump pulse is optimized. The results show that the maximum temperature rise of the laser decreases obviously when the width of the pump pulse is between 1μs and 10μs for the substrate-removed InGaAs quantum-well vertical external cavity surface emitting laser. At the same time, the repetition frequency of the pumping pulse should be limited Within 50kHz, to meet the pulse interval greater than the laser thermal relaxation time requirements, or the laser will produce heat accumulation, increase the maximum temperature rise.