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用低温光荧光(PL)和透射电子显微镜(TEM)研究了表面氮化自组织InAs/GaAs量子点的光学性能和微观结构。结果表明氮化后形成薄层的InAsN薄膜作为应变缓和层覆盖在量子点的表面,使得随着氮化时间的增加,InAs量子点的位错密度提高、尺寸变大、纵横比提高、发光波长变长、强度变低。
The optical properties and microstructure of surface nitrided InAs / GaAs QDs were studied by using low temperature photoluminescence (PL) and transmission electron microscopy (TEM). The results show that the thin films of InAsN formed after nitriding cover the surface of the QDs as strain relaxation layers. As the nitriding time increases, the dislocation density, size and aspect ratio of InAs quantum dots increase. The emission wavelength Become longer, lower strength.