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以PEDOT∶PSS作为空穴注入层,聚合物PVK作为空穴传输层,制备了结构为ITO/PEDOT∶PSS/PVK/8-羟基喹啉钕(Ndq3)/Al的近红外OLED,研究了PVK与PEDOT∶PSS功能层对器件I-V特性和EL光谱的影响。结果显示,在EL光谱中的905,1 064,1 340 nm处均观察到了荧光发射,分别对应于Nd3+的4F3/2→4I9/2、4F3/2→4I11/2和4F3/2→4I13/2能级跃迁。与参考器件对比分析认为,PEDOT∶PSS高的导电性降低了器件的串联电阻,增大了器件的工作电流;PVK与PEDOT∶PSS共同降低了空穴的注入势垒,实现了Ndq3发光层区域的载流子的注入平衡并改善了器件的发射强度。此外,PVK有效降低了ITO电极表面粗糙度,也是器件性能提高的原因之一。
PEDOT: PSS as a hole injection layer and PVK as a hole transport layer, a near-infrared OLED with a structure of ITO / PEDOT: PSS / PVK / neodymium 8-hydroxyquinoline (Ndq3) / Al was prepared. And PEDOT: PSS functional layer on device IV characteristics and EL spectra. Fluorescence emission was observed at 905,1 064,1 340 nm in the EL spectrum corresponding to 4F3 / 2 → 4I9 / 2, 4F3 / 2 → 4I11 / 2 and 4F3 / 2 → 4I13 / 2 of Nd3 + 2 level jump. Compared with reference devices, the high conductivity of PEDOT: PSS reduces the series resistance of the device and increases the operating current of the device. PVK and PEDOT: PSS jointly reduce the injection barrier of holes, and the region of Ndq3 light-emitting layer Carrier injection balance and improve the emission intensity of the device. In addition, PVK effectively reduces the ITO electrode surface roughness, which is one of the reasons for the improvement of device performance.