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导出了由两种材料构成的多量子阱光波导的模式截止方程，并讨论了Si衬底上生长的应变GexSi1-x／Si多量子阶光波导的模式截止特性。
The mode cut-off equations of the MQW optical waveguide composed of two materials are derived and the mode-cut characteristics of the strained GexSi1-x / Si MQW optical waveguide grown on the Si substrate are discussed.