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利用电子束蒸镀方法及重掺杂p型硅为蒸发源在K8玻璃衬底上沉积非晶硅薄膜,采用镍诱导晶化法在氮气氛围下进行退火处理制备出p型多晶硅薄膜。研究了不同温度热处理条件对p型多晶硅薄膜的光电性能的影响,通过霍尔测量、拉曼光谱、原子力显微镜、紫外-可见光吸收光谱等测试手段对薄膜进行分析。结果表明,随着晶化温度的提高晶化程度先增强后减弱。优化晶化温度使30 nm厚p型多晶硅薄膜的方块电阻达到300Ω/□,在可见光范围的透射率超过10%。
An amorphous silicon thin film is deposited on a K8 glass substrate by electron beam evaporation method and heavily doped p-type silicon as an evaporation source, and then a p-type polycrystalline silicon thin film is prepared by annealing under a nitrogen atmosphere by a nickel induced crystallization method. The effects of different heat treatment conditions on the photoelectric properties of p-type polycrystalline silicon thin films were investigated. The films were analyzed by Hall measurement, Raman spectroscopy, atomic force microscopy and UV-Vis absorption spectroscopy. The results show that the degree of crystallization increases first and then decreases with the increase of crystallization temperature. The crystallization temperature is optimized so that the sheet resistance of a 30 nm thick p-type polycrystalline silicon thin film reaches 300 Ω / □ and the transmittance in the visible range exceeds 10%.