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采用激射波长为850 nm的AlGaInAs/AlGaAs梯度折射率波导分别限制增益量子阱结构的外延片,设计并制备了具有条形结构和锥形结构的半导体激光器。在输出功率同为1 W时,锥形激光器的发散角、光束传播因子和亮度分别为4°、2.8和9.9 MW.cm-2.sr-1,远好于条形激光器的6°、9.2和3.0 MW.cm-2.sr-1。当外加3 A的脉冲电流时,锥形激光器峰值功率达到1.40 W,斜率效率为0.58 W/A,电光转换效率为30%。实验结果表明,锥形激光器可以在保证大功率输出的前提下,具有更高的光束质量。
An AlGaInAs / AlGaAs graded-index waveguide with a lasing wavelength of 850 nm is used to limit the epitaxial wafers of the gain quantum well structure respectively. A semiconductor laser with a bar structure and a tapered structure is designed and prepared. The taper laser’s divergence angle, beam propagation factor and brightness are 4 °, 2.8 and 9.9 MW-2.sr-1, respectively, which are much better than those of the bar laser at 6 °, 9.2 And 3.0 MW.cm-2.sr-1. When 3 A pulse current was applied, the peak power of the cone laser reached 1.40 W, the slope efficiency was 0.58 W / A and the electro-optic conversion efficiency was 30%. Experimental results show that the conical laser can achieve higher beam quality with high power output.