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本文用Galerkin有限元法对半导体器件的方程组进行了统一处理。由Fortran语言编写的计算程序,采用了大型稀疏矩阵编程技巧和内外循环叠代,它适用于任意二维几何构形和掺杂剖面的太阳电池,其中包括了电场对迁移率的影响和各种复合效应。本程序可以中途起步计算,具有良好的收敛性,并能节省计算时间,为定量估计各参量对太阳电池性能的影响提供了一种分析手段。本文还对一种简单构形的模型太阳电池进行了实例数值计算。
In this paper, Galerkin finite element method for the semiconductor device equations were unified. Computational programs written in the Fortran language, using large-scale sparse matrix programming techniques and internal and external iterations, are suitable for any two-dimensional geometry and doped cross-section solar cells, including the effect of electric field on mobility and various Compound effect. This program can start calculation midway, has good convergence, and can save calculation time, which provides a means of analysis for quantitatively estimating the influence of various parameters on solar cell performance. In this paper, an example numerical calculation of a simple configuration model solar cell is also carried out.