【摘 要】
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We report the edge-defined-film-fed (EFG)-grownβ-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of～nA and a rectified ratio of～104 at
【机 构】
：
Laboratory of Information Functional Materials and Devices, School of Science&State Key Laboratory o
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We report the edge-defined-film-fed (EFG)-grownβ-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of～nA and a rectified ratio of～104 at ±5 V. In addition, the photodiode detector shows a dark currentof 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D*) of 1010 Jones, and an external quantum efficiency (EQE) of 1.4％at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.
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