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用ＰＥＣＶＤ方法制备氮化硅薄膜，研究了射频频率对氮化硅薄膜的沉积和性质的影响。结果表明，在低频下（１００ＫＨｚ）制备的氮化硅薄膜密度较大，具有８ｘ１０９Ｐａ左右的压应力和较小的刻蚀速率；而高频（１３．５６ＭＨｚ）沉积的氮化硅薄膜密度较小，具体约２ｘ１０９Ｐａ的张应力，刻蚀速率较大。红外光谱表明，薄膜性质同薄膜中的氢原子成键情况有关。实验中利用高、低频交替沉积的方法，成功地制备了低应力（１０７Ｐａ）氮化硅薄膜。当加热到５００Ｃ时，应力较大的氮化硅薄膜会发生开裂（张应力）或拱起（压应力）。低应力的氮化硅薄膜能够承受７００Ｃ的温度，温度更高时，薄膜的完整性因氢溢出而破坏。
Silicon nitride films were prepared by PECVD and the effect of RF frequency on the deposition and properties of silicon nitride films was investigated. The results show that the silicon nitride films prepared at low frequency (100KHz) have higher density and compressive stress of 8x109Pa and lower etching rate, while the films deposited at high frequency (13.56MHz) have lower density , Specifically about 2x109Pa tensile stress, etching rate greater. Infrared spectroscopy shows that the nature of the film is related to the bonding of hydrogen atoms in the film. In the experiment, low stress (107Pa) silicon nitride films were successfully prepared by high and low frequency alternating deposition. When heated to 500C, the stress is greater silicon nitride film cracking (tensile stress) or arching (compressive stress). Low-stress silicon nitride film can withstand the temperature of 700C, the higher the temperature, the integrity of the film due to overflow and destruction of hydrogen.