采用电感耦合等离子体(ICP)氧等离子体刻蚀金刚石膜,探寻金刚石膜表面处理的方法。通过分析不同ICP射频源功率和不同偏压源功率下的刻蚀速率,研究了金刚石膜刻蚀的机理作用;通过拉曼光谱进行表征,分析刻蚀前后sp2与sp3的含量。结果表明,在ICP氧等离子体刻蚀的过程中,sp3键部分转化为sp2键;刻蚀后表面粗糙度降低;当刻蚀功率较高时,可同时刻蚀sp2和sp3键,而且刻蚀sp2的速率强于sp3。在刻蚀实验及机理探索基础上优化了刻蚀功率。 The diamond film was etched by inductively coupled plasma (ICP) oxygen plasma to explore the surface treatment of diamond film. The mechanism of diamond film etching was studied by analyzing the etching rate under different RF power and different bias power. The Raman spectra were used to characterize the content of sp2 and sp3 before and after etching. The results show that the sp3 bond is partially converted to sp2 bond during ICP oxygen plasma etching. The surface roughness decreases after etching. When the etching power is high, the sp2 and sp3 bonds can be simultaneously etched, and the etching sp2 is faster than sp3. The etching power is optimized based on the etching experiment and mechanism exploration.