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Ce has been introduced into the Si single crystal by means of vacuum deposition of Ce onto a Si wafer and then annealing at 1050℃ for 20 hours in vacuum.In the annealing process, Ce-Si alloy was formed on the surface at first, then Ce atoms were diffused into Si and produced a diffusion region with thickness about 4.5μm. The concentration profile of Ce was dedermined by SIMS. The diffusion coefficient of Ce in Si at 1050℃ was obtained as 3.9×10-13 cm2/s while the average resistivity P of the Ce diffusion layer was measured from 77K to 450K.
Ce has been introduced into the Si single crystal by means of vacuum deposition of Ce onto a Si wafer and then annealed at 1050 ° C for 20 hours in vacuum. The annealing process, Ce-Si alloy was formed on the surface at first, then The concentration profile of Ce was derated by SIMS. The diffusion coefficient of Ce in Si at 1050 ° C was obtained as 3.9 × 10-13 cm2 / s while the The average resistivity P of the Ce diffusion layer was measured from 77K to 450K.