论文部分内容阅读
采用无毒、不易燃的六甲基二硅胺烷和氢气在硅(001)单晶上用施加负偏压处理和化学汽相沉积(CVD)方法预沉积定向的βSiC.傅里叶红外光谱证实βSiC层的存在.微俄歇谱表明在这种方式下,850℃下即生成密集的与硅的三个〈001〉方向平行的碳化硅单晶晶粒.接着用甲烷代替六甲基二硅胺烷作为碳源,在其上继续施加负偏压处理和CVD生长.微俄歇谱表明小正方形渐渐变成大正方形,其成分也从含硅碳变成只含碳.微喇曼谱证实了这一变化过程中的相结构从立方碳化硅变成金刚石.这一生长过程中对应的定向关系为金刚石〈001〉∥βSiC〈001〉∥硅〈001〉.
The oriented βSiC was pre-deposited on a silicon (001) single crystal using a non-toxic, non-flammable hexamethyldisilazane and hydrogen gas by applying a negative bias treatment and a chemical vapor deposition (CVD) method. The presence of the βSiC layer was confirmed by micro-Auger spectroscopy showing that in this manner, dense single-crystal silicon carbide grains parallel to the three <001> directions of silicon were formed at 850 ° C. Then, methane was used instead of hexamethyldi As a carbon source, silylane continued to be applied with negative bias and CVD growth.The micro-Augerogram showed that the small square gradually became a large square, and its composition also changed from silicon-containing carbon to carbon-only. It was confirmed that the phase structure changed from cubic silicon carbide to diamond, and the corresponding orientation in this growth was diamond <001> ∥βSiC <001> ∥Si1 <001>.