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在由 S-1型磁心材料制成的线选法存贮器的设计中基本问题是实现一个能满足多种性能要求的读出放大器。一般要求读出放大器对双向信号均具有稳定的增益,信号传送的延时小,避免直流电平的偏移,在数位脉冲(或禁止脉冲)干扰后的短时间内能恢复,鉴别电平稳定等。虽然有过很多有关读出放大器设计的文章,但就作者所知,对于一个处于“最坏输入形式”——一长串单向脉冲中夹有一串数位脉冲干扰下的4—6微秒的存贮器来说没有一篇特别合适的。本文讨论了对于具有所要求的存取周期的线选法存贮器的读出放大器的基本要求,给出了读出放大器的新线路、它的作用及设计。重点放在技术的改进和线路的提出上。对设计时采用过的几种其它方法也做了扼要介绍。作者对读出问题的可能发展途径也进行了探讨。
The basic problem in the design of line select memories made of S-1 core material is the realization of a sense amplifier that meets a variety of performance requirements. It is generally required that the sense amplifier has a stable gain for bidirectional signals, the delay of signal transmission is small, the offset of the DC level is avoided, the digital signal can be recovered within a short period of time after the digital pulse (or pulse is prohibited), and the level of discrimination is stable . Although there have been many articles on sense amplifier designs, to the authors’ knowledge, for a micro-second of 4-6 microseconds in a “worst-case input” mode with a series of digital pulses intervening in a long series of one-way pulses None of the memory is particularly suitable. This paper discusses the basic requirements of a sense amplifier for a line select memory with the desired access cycle, a new sense amplifier circuit, its function, and its design. Emphasis is placed on the improvement of technology and the presentation of routes. Several other methods used in the design have also made a brief introduction. The author also explores possible ways of reading out the problem.