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为了研究Eu~(3+)掺杂MoS_2薄膜的光电特性,采用气相运输沉积法在p-Si衬底上沉积MoS_2薄膜,并利用原子力显微镜(AFM)、X射线衍射仪(XRD)、霍尔效应仪、分光光度计和光致发光光谱仪研究了Eu~(3+)掺杂对MoS_2薄膜的表面形貌﹑晶体结构﹑光吸收以及MoS_2-Si异质结的光电流的影响。研究表明:Eu~(3+)掺杂使MoS_2薄膜的结晶更好;同时MoS_2薄膜的电子迁移率和电导率增加了一个数量级,并使MoS_2-Si异质结具有良好的伏安特性和光电响应。另外,Eu~(3+)掺杂增强了MoS_2薄膜的光吸收,并使MoS_2薄膜在室温下产生红光。以上结果表明,Eu~(3+)掺杂MoS_2薄膜可用于制作高效率的发光与光电子器件。
In order to study the photoelectric properties of Eu 3+ -doped MoS 2 thin films, MoS 2 thin films were deposited on the p-Si substrate by vapor transport deposition and characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) The effects of Eu 3+ doping on the surface morphology, crystal structure, optical absorption and photocurrent of MoS_2-Si heterojunction were investigated by means of X-ray photoelectron spectroscopy, photometer, spectrophotometer and photoluminescence spectrometer. The results show that the Eu 3+ doping improves the crystal structure of MoS 2 thin films and increases the electron mobility and the conductivity of the MoS 2 thin films by an order of magnitude and makes the MoS 2 -Si heterojunction have good volt-ampere characteristics. response. In addition, the Eu 3+ doping enhanced the light absorption of the MoS 2 film and the MoS 2 film produced red light at room temperature. The above results show that Eu ~ (3+) doped MoS_2 thin films can be used to fabricate high efficiency light-emitting and optoelectronic devices.