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对部分耗尽 CMOS/ SOI工艺进行了研究 ,成功地开发出成套部分耗尽 CMOS/ SOI抗辐照工艺 .其关键工艺技术包括 :PBL (Poly- Buffered L OCOS)隔离、沟道工程和双层布线等技术 .经过工艺投片 ,获得性能良好的抗辐照 CMOS/ SOI器件和电路 (包括 10 1级环振、 5 0 0 0门门海阵列和 6 4K CMOS/ SOI静态存储器 ) .其中 ,NMOS:Vt=1.2 V ,BVds=7.5— 9V ,μeff=42 5 cm2 / (V· s) ,PMOS:Vt=- 0 . 9V,BVds=14— 16 V,μeff=2 40 cm2 /(V· s) ,当工作电压为 5 V时 ,0 .8μm环振单级延迟为 10 6 ps,SOI 6 4K CMOS静态存储器数据读取时间为 40 ns
The partially depleted CMOS / SOI process was studied, and a set of partially depleted CMOS / SOI radiation resistant process was successfully developed.The key process technologies include: Poly-Buffered L OCOS (PBL) isolation, channeling and double layer Wiring and other technologies through the process of film, get good performance of anti-radiation CMOS / SOI devices and circuits (including 10 1 ring oscillator, 500 gate array and 6 4K CMOS / SOI static memory.) Among them, NMOS: Vt = 1.2 V, BVds = 7.5-9 V, μeff = 42 5 cm2 / (V · s), PMOS: Vt = -0.9 V, BVds = 14-16 V, s). When the operating voltage is 5 V, the single-stage delay of 0 .8 μm ring oscillator is 10 6 ps, and the SOI 6 4K CMOS static memory data read time is 40 ns