本文叙述了合成溶质(固体红磷)扩散法生长磷化镉(CdP_2)。经X射线分析证明,合成的化合物为CdP_2。用它作扩散源,在杂质浓度为8×10~(15)厘米~(-3)的InP片上扩散形成P—N结,其反向击穿电压达140伏。如用CdP_2加红磷作扩散源,其红磷量的多少可以控制扩散结深。 This paper describes the synthesis of CdP 2 by the diffusion method of synthetic solute (solid red phosphorus). X-ray analysis showed that the synthesized compound was CdP_2. Using it as a diffusion source, the P-N junction is diffused into the InP wafer with the impurity concentration of 8 × 10 ~ (15) cm ~ (-3), and the reverse breakdown voltage is up to 140V. Such as using CdP_2 plus red phosphorus as a diffusion source, the amount of red phosphorus can control the diffusion junction depth.