设计了一种基于库仑阻塞原理的新型单电子多值存储器 .器件包括两个多隧穿结结构和一个单电子晶体管 ,其中单电子晶体管起到一个静电计的作用来实现数据的读取 .两个隧穿结库仑阻塞区域的大小不同使得器件具有三个稳定的存储状态 .利用这个原理可以制备出多值的动态随机存储器和非挥发性的随机存储器 .这种低功耗的单电子多值存储器可以实现信息的超高密度存储 . A new single-electron multi-valued memory based on Coulomb blocking principle is designed.The device consists of two multi-tunneling junction structures and a single electron transistor, in which the single electron transistor acts as an electrometer to read the data. The size of the tunneling junctions in the Coulomb blockade area enables the device to have three stable storage states that allow for the production of multivalued DRAMs and nonvolatile RAMs. This low power, single electron multivalue Memory can achieve ultra-high-density storage of information.