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通过脉冲激光法在石英玻璃基底上沉积了锡掺杂氧化镉(Sn-CdO)透明导电薄膜。X射线衍射,分光光度计和霍尔效应仪检测了薄膜的结构、光学和电学性能。结果表明Sn的掺杂提高了薄膜[111]方向的择优生长,而且促使了(200)晶面衍射角增大。Sn-CdO薄膜的光学禁带宽度随着Sn掺杂含量的增加而变宽。另外,适量的Sn掺杂可以明显改善CdO薄膜的电学性能,比如2.9 at%Sn掺杂CdO薄膜的电阻率是未掺杂薄膜的十二分之一,载流子浓度是未掺杂的十三倍。因而光学和电学性能的改良使得Sn-CdO薄膜作为透明导电材料具有重要的应用价值。
A tin-doped cadmium oxide (Sn-CdO) transparent conductive film was deposited on a quartz glass substrate by a pulsed laser method. X-ray diffraction, spectrophotometer and Hall effect of the film structure, optical and electrical properties. The results show that the doping of Sn improves the preferential growth in the [111] direction and promotes the increase of the diffraction angle of the (200) plane. The optical band gap of Sn-CdO films widened with the increase of Sn doping content. In addition, the appropriate amount of Sn doping can significantly improve the electrical properties of CdO films, such as 2.9 at% Sn-doped CdO film resistivity is one-twelfth of the undoped thin film, the carrier concentration is undoped ten three times. Therefore, the improvement of optical and electrical properties make Sn-CdO film as a transparent conductive material has important application value.