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本课题研发的GaAs化合物半导体光电导型探测器可用于脉冲辐射束的探测。化合物半导体GaAs、InP光电导探测器加上恒定电压,在脉冲X、γ射线束的照射下,光电导探测器的电阻下降,而在电极输出端输出正比于电阻变化的电流脉冲信号。本实验采用面垒工艺技术制备GaAs光电导探测器。这种工艺制备的GaAs光电导探测器特点是工艺简单、性能稳定、时间响应快。图1为GaAs光电导探测器时间响应的测试结果。
The subject of the research and development of GaAs compound semiconductor photoconductive detector can be used for the detection of pulsed radiation beam. Compound semiconductor GaAs, InP photoconductive detector plus a constant voltage, pulsed X, gamma beam irradiation, the photoconductive detector resistance decreases, and the output of the electrode is proportional to the resistance change output current pulse signal. In this experiment, GaAs photoconductive detector was fabricated by using surface barrier technology. GaAs photoconductive detector prepared by this process is characterized by simple process, stable performance and fast response time. Figure 1 shows the time response of the GaAs photoconductive detector.