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Abstract：This paper describes the design, characterization and fabrication of a planar In0.53Ga0.47Asbased planar Gunn diode on an InP semi-insulating substrate. The planar Gunn diode was designed inCoplanar Waveguide(CPW) format with an active channel length and width of 4 μm and 120 μmrespectively, and modeled using the Advanced Design System(ADS-2009) simulation package. The initialexperimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF outputpower of -6.6 dBm, which is the highest recorded power for an InP based planar Gunn diode.