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电荷耦合器件(CCD)受强激光照射时,会出现干扰、饱和及串音现象。在现代光电对抗中,正是利用这些特性对CCD造成软损伤,进而对目标起到防护的作用。主要针对632.8nm激光辐照面阵Si基CCD时产生的饱和、干扰及串音现象进行了相关研究。搭建了实验系统,获取了实验数据;在对实验数据作深入分析和研究的基础上,总结了串音区域和干扰区域面积与辐照激光功率之间的关系,根据此关系拟合计算出了干扰阈值为0.57W/cm~2和串音阈值为8.26W/cm~2;最后将拟合出的CCD参数与实际CCD的参数作了比较,误差为2%。拟合结果证明本文所提出的干扰模型是合理的,能够很好地用于面阵CCD实际干扰效果评估和预测。
Charged-coupled devices (CCDs) suffer from interference, saturation and crosstalk when exposed to intense laser light. In modern photoelectric confrontation, it is precisely the use of these characteristics of the CCD caused by soft damage, and thus play a protective role on the target. Mainly for the 632.8nm laser irradiation area Si-based CCD generated saturation, interference and crosstalk phenomenon were studied. Based on the in-depth analysis and research on the experimental data, the relationship between the crosstalk area and the area of the interfering area and the power of the irradiated laser light is summarized, and the relationship between the laser power and the area of the irradiated area is calculated The interference threshold is 0.57W / cm ~ 2 and the crosstalk threshold is 8.26W / cm ~ 2. Finally, the fitted CCD parameters are compared with the actual CCD parameters with an error of 2%. The fitting result proves that the interference model proposed in this paper is reasonable and can be well used in the actual interference effect evaluation and prediction of the area array CCD.