The results calculated by computer for the double drift region IMPATT diode oscillator on the 8 mmwaveband are reported in this paper.A comparison between single and double drift devices concerning thepower output and efficiency is given.The effect of doping profile,current density and RF voltage on theperformances of these devices have also been investigated.The theoretical data of these double driftIMPATT oscillator and amplifier are provided. The results calculated by computer for the double drift region IMPATT diode oscillator on the 8 mmwaveband are reported in this paper. A comparison between single and double drift devices concerning the power output and efficiency is given. The effect of doping profile, current density and RF voltage on theperformances of these devices have also been investigated.The theoretical data of these double driftIMPATT oscillator and amplifier are provided.