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采用分析纯SnCl4.5H2O和NH3.H2O为主要原料,控制不同Co2+/Sn4+摩尔比,利用均匀共沉淀法制备了(Sn1-x,Co2x)O2纳米粉体样品,并以白云母为基片利用厚膜工艺制得气敏元件。对样品的结构、结晶性能和活性等分析发现,Co2+以类质同像的方式代替了SnO2晶格中的Sn4+,并引起了M—O键长、晶胞参数和M—O八面体电价平衡的非均一性,进而提高了粉体活性及n型半导体性能。在不同浓度H2中元件气敏性能测试表明,Co2+的引入提高了SnO2的H2灵敏度。元件的灵敏度与H2浓度之间具有较好的线性关系。实验得到了制备(Sn1-x,Co2x)O2气敏材料的最佳Co2+/Sn4+摩尔比。
(Sn1-x, Co2x) O2 nanopowders were prepared by homogeneous coprecipitation method using SnCl4.5H2O and NH3.H2O as the main raw materials to control the molar ratio of different Co2 + / Sn4 + Thick film process gas sensor. The structure, crystallinity and activity of the samples were analyzed. It was found that Co2 + replaced the Sn4 + in the SnO2 lattice with the isomorphism and caused the M-O bond length, cell parameters and M-O octahedral electricity price balance Of heterogeneity, thereby increasing the powder activity and n-type semiconductor properties. Gas sensitivities of H2 at different concentrations showed that the introduction of Co2 + increased the H2 sensitivity of SnO2. There is a good linear relationship between the sensitivity of the element and the H2 concentration. The optimal Co2 + / Sn4 + molar ratio of (Sn1-x, Co2x) O2 gas-sensing materials was obtained experimentally.