DETERMINATION OF GENERATION LIFETIME FROM C-t TRANSIENTS UNDER LINEAR VOLTAGE RAMP BIAS

来源 :Journal of Electronics(China) | 被引量 : 0次 | 上传用户:luqing77
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When a linear voltage ramp is applied to the gate of a MOS capacitor,a capacitance-time(C-t)transient is observed.The MOS capacitor is biased into strong inversion before apply-ing the voltage ramp in order to eliminate surface generation.From C-t transie
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