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本文采用 Zn_3P_2作扩散源进行真空闭管扩散,对锌在 InP 单晶中的扩散行为作了研究。通过实验给出了扩散系数与温度的关系,并得到了锌在InP 单晶中的激活能。通过实验发现:在相同扩散温度下表面受主浓度随结深加大而减少。采用空位随时间变化的模型解释了这一实验结果,研究了高阻衬底片 p-n 结显示时出现双线的问题。
In this paper, Zn_3P_2 was used as a diffusion source for vacuum closed-tube diffusion. The diffusion behavior of zinc in InP single crystal was studied. The relationship between diffusion coefficient and temperature is given experimentally, and the activation energy of zinc in InP single crystal is obtained. The experimental results show that the acceptor concentration decreases with the increase of junction depth under the same diffusion temperature. The experimental results were explained by the model of vacancies with time, and the problem of double line appeared when the p-n junction of the high-resistivity substrate was displayed.