立方氮化硼薄膜沉积过程的相变研究

来源 :物理学报 | 被引量 : 0次 | 上传用户:lianzi0118
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
从能量和结构两个角度分析了BN四种相的转变过程,以及杂质和缺陷对立方氮化硼(c-BN)薄膜制备的影响.研究了从六角氮化硼(h-BN)到c-BN转变的一个可能的过程,即h-BN→菱形氮化硼(r-BN)→c-BN过程.对纯的h-BN到r-BN的转变需要克服一个很高的能量势垒,在实验室条件下很难能够提供能量来越过这个势垒.而从r-BN到c-BN的转变只需要克服一个很低的能量势垒.这个能量势垒要低于从h-BN到纤锌矿氮化硼(w-BN)转变所需要克服的能量势垒.c-BN薄膜的制备过程中,薄膜在高能粒子轰击下,会产生大量的缺陷,这些缺陷对立方相的形成起到了重要的作用,缺陷和杂质的存在大大降低了从h-BN到r-BN转变的能量势垒.根据这个理论模型,在两步法制备c-BN薄膜的基础上,调整实验参数,形成三步法制备高质量c-BN薄膜.主要研究了三步法中第一步的时间和衬底负偏压对c-BN薄膜制备的影响,找到合适的沉积时间和衬底负偏压分别为5min和-180V.采用三步法制备薄膜,可以重复得到高立方相体积分数(立方相体积分数超过80%)的BN薄膜,并且实验重复性达到70%以上. The effects of impurities and defects on the preparation of cubic boron nitride (c-BN) thin films were analyzed from energy and structure perspectives. The effects of the transformation from hexagonal boron nitride (h-BN) to c -BN transition, that is, h-BN → rhombohedral boron nitride (r-BN) → c-BN process.The transition from pure h-BN to r-BN needs to overcome a very high energy barrier , It is very difficult to provide energy to overcome this barrier under laboratory conditions, whereas the transition from r-BN to c-BN only needs to overcome a very low energy barrier which is lower than that from h-BN To the w-BN (w-BN) transformation needed to overcome the energy barrier.C-BN film preparation process, the film in high-energy particle bombardment, there will be a large number of defects, these defects on the cubic phase formation Played an important role, the existence of defects and impurities greatly reduces the energy barrier of the transition from h-BN to r-BN.Based on this theoretical model, based on the two-step preparation of c-BN film, the experimental parameters are adjusted, The formation of three-step high-quality c-BN film prepared mainly studied the first step in three-step time and substrate negative bias on the c-BN film preparation to find the right The deposition time and the substrate negative bias were 5min and -180V, respectively.The BN films with high cubical phase volume fraction (cubic phase volume fraction more than 80%) were obtained repeatedly by the three-step method and the repeatability reached 70 %the above.
其他文献
以N-苄氧羰基-(S)-脯氨酸和5-(1-氨基烷基)四氮唑(烷基:甲基、乙基、2-苯基乙基)为原料,经两步反应合成了3个新颖的有机催化剂:(S)-5-脯氨酰胺基甲基四氮唑(3a),(S,S)-5-(1-
以MnCO3与多胺羧酸铋反应,合成了含铋多金属配合物[Mn(H2O)6][Bi(edta)]2.2H2O,通过元素分析和红外光谱对配合物的组成和结构进行了表征.用热重-差热手段研究了配合物的热分
将任意形状槽的连续轮廓近似用一系列相连的矩形阶梯近似,利用各阶梯面上导纳的匹配,以及槽与互作用区边界场的连续与匹配条件,获得了具有任意槽的矩形波导栅慢波结构的色散
将经过多级提纯、垂直无籽晶气相输运法生长的CdSe晶锭切割,获得沿生长轴向分布的1.3mm厚晶片系列,采用日本SH IMAZU公司的IRpresting-21傅立叶变换红外光谱仪、ZC36型高阻仪
基于光诱导的原子脱附技术,采用脉冲紫外光剥离出玻璃池壁上吸附的铷原子以形成可快速开启和关断的脉冲铷原子源,成功地解决了单真空腔系统中磁阱的原子数和寿命之间的矛盾,
借助于Tersoff势函数和分子动力学模拟技术研究了室温下500eV的能量粒子硼(4个)和氮(8个)共掺入金刚石晶体中所引起的损伤区域内晶体微细观结构的变化特征以及后续加热退火晶
以“热像”形成的衍射理论模型和分步傅里叶算法为基础,模拟研究了厚介质情况下“热像”的形成特点.重点分析了散射点调制系数(包括振幅调制和相位调制)、散射点与介质前表面
建立了一种土-偏心结构相互作用简化模型,研究了考虑土-结构相互作用因素后结构平扭耦联反应.采用拉格朗日能量法推导了结构的运动方程,并结合算例,用振型分解法对结构的平扭
针对不同结构的混沌系统广义同步问题,提出了基于T-S 模糊模型的H∞控制方法,利用Lyapunov方法和线性矩阵不等式技术,给出了误差闭环系统稳定的充分条件.仿真结果表明了方法