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通过离子束辅助沉积(IBAD)在热氧化SiO2上沉积Al2O3薄膜,在120keV下注入5×1015cm-2Er离子,Ar气氛下773～1273K退火1h。低温下测试PL谱线,随退火温度升高,发光强度上升。973K退火下发光强度特别低,并观察到Si衬底的1140nm峰。光透射谱表明几乎在所有的测试范围内尤其在1530nm处973K退火样品的透射谱强度最强,波导损耗最低。1530nm发光强度随退火温度的变化跟发光强度的变化相反。说明Er离子在514.5nm泵谱吸收界面σ跟Al2O3的光吸收损耗有一定关系。
An Al2O3 film was deposited on thermally oxidized SiO2 by ion beam assisted deposition (IBAD), 5 × 1015cm-2Er ions were implanted at 120keV and annealed at 773 ~ 1273K for 1h in Ar atmosphere. PL spectrum was tested at low temperature, with the annealing temperature increases, the luminous intensity increased. The emission intensity was extremely low at 973K annealing, and the 1140 nm peak of the Si substrate was observed. The light transmission spectrum shows that the intensity of the transmitted spectrum of 973K annealed sample is the strongest at 1530 nm in almost all test ranges and the waveguide loss is the lowest. 1530nm luminous intensity with the annealing temperature changes with the luminous intensity of the opposite. It is shown that the absorption band gap σ of Er ion at 514.5nm is related to the light absorption loss of Al2O3.