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采用雪崩热电子注入技术研究了纳米级富氮 Si Ox Ny 薄膜界面陷阱的物理模型。证实了 PECVDSi Ox Ny 薄膜中界面陷阱来源于悬挂键的物理模型。观察到该纳米膜内存在着受主型电子陷阱 ,随着注入的增长 ,界面上产生的这种陷阱将起主导作用。发现到 Dit随雪崩热电子注入剂量增加而增大 ,禁带上半部 Dit的增大较下半部显著。指出了雪崩注入过程中在 Si Ox Ny 界面上产生两种性质不同的电子陷阱 ,并给出它们能级位置及密度大小关系。揭示出 PECVD法形成的这种纳米膜与快速热氮化制备的薄膜中、氮氧含量不同、界面陷阱特性变化不一样 ,并从薄膜氮化机制予以物理解析。给出了 PECVD形成纳米级薄膜的优化工艺条件 ,该工艺条件制成膜的界面陷阱及其它物理电学特性都比较好
The avalanche hot electron injection technique was applied to study the physical model of interface traps in nanoscale nitrogen-rich Si Ox Ny films. It is confirmed that the interface traps in PECVDSi Ox Ny films originate from the physical model of dangling bonds. It is observed that there are acceptor-type electron traps in the nanofilm. With the increase of the injection, the trap generated at the interface will play a leading role. It was found that Dit increased with the dose of avalanche hot electron injection, and the increase of Dit in the upper half of the band was more significant than that in the lower half. It is pointed out that two kinds of electron traps with different properties are generated at the interface of Si Ox Ny during avalanche injection, and their energy level positions and density relations are given. It is revealed that the films formed by PECVD and the rapid thermal nitriding have different contents of nitrogen and oxygen, different characteristics of interfacial traps, and physical analysis from the film nitriding mechanism. The optimum process conditions for the formation of nanoscale films by PECVD are given. The interface traps and other physical electrical properties of the films prepared by this process are good