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本文利用电弧离子镀技术,施加不同脉冲偏压,在玻璃基体上沉积了N掺杂TiO2薄膜。研究了基体偏压和热处理对薄膜结构、光吸收性能及光催化降解甲基橙的反应活性。结果表明:随脉冲偏压的提高,薄膜相结构先由锐钛矿向非晶转变然后向锐钛矿和金红石的混合相转变,吸收边先红移后蓝移,透明度先下降后升高。400℃下退火4 h,薄膜结晶形貌更加明显,吸收边进一步红移,透明度提高。原始薄膜和退火后的薄膜都具有高的紫外光催化活性。可见光下经过退火的-300V偏压下制备的薄膜具有最好的光催化活性。
In this paper, an arc-ion plating technique is used to apply different pulse bias voltages to deposit N-doped TiO2 thin films on a glass substrate. The effects of substrate bias and heat treatment on the structure of thin films, light absorption and photocatalytic degradation of methyl orange were studied. The results show that with the increase of pulse bias, the phase structure of the film changes from anatase to amorphous first, and then to the mixed phase of anatase and rutile. The absorption edge shifts to red shift first and then blue shift, then the transparency first decreases and then increases. Annealed at 400 ℃ for 4 h, the crystal morphology of the film is more obvious, the absorption edge further red shift, the transparency increased. Both the original film and the annealed film have high UV light catalytic activity. Films prepared at -300V bias in the visible light annealed have the best photocatalytic activity.