研究了波导层材料为Al0.65Ga0.35As时的3种不同厚度(0.4,0.5和0.6μm)和3种不同的Al GaAs基大光学腔(Al0.65Ga0.35As-1μm,Al0.6Ga0.4As-1.5μm和Al0.45Ga0.55As-2μm)的808 nm边发射二极管激光器的输出特性。理论计算模拟了不同结构器件的功率-电流特性(P-I)曲线,采用线性拟合的方法计算阈值电流,并计算了器件的特征温度。实验结果验证了理论计算结果。波导层厚度变化的研究说明,当单量子阱的厚度不变时,波导层越厚,器件的特征温度越高,器件的性能也就越好。大光学腔变化的研究表明,由于Al的组分x=0.45时会产生有效的垂直光斑尺寸和更低的电阻,使得2μm-LOC结构的器件性能最好。 Three kinds of AlGaAs based optical cavities (Al0.65Ga0.35As-1μm, Al0.6Ga0.4As, Al0.6Ga0.35As, Al0.6Ga0.35As, -1.5μm and Al0.45Ga0.55As-2μm) 808 nm edge-emitting diode laser output characteristics. The power-current characteristic (P-I) curve of different devices is simulated by theoretical calculation. The threshold current is calculated by the linear fitting method, and the characteristic temperature of the device is calculated. The experimental results verify the theoretical calculation results. The research on the variation of waveguide layer thickness shows that when the thickness of single quantum well is constant, the thicker the waveguide layer is, the higher the characteristic temperature of the device is, the better the performance of the device is. Large optical cavity changes in the study shows that, as the Al component x = 0.45 will produce effective vertical spot size and lower resistance, making 2μm-LOC structure of the device performance best.